Studies on effect of Ca-doping on structure and electrochemical properties of garnet-type Y3-xCaxFe5O12-o

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@Article{ZHANG:2020:JSSC,

• author = "Zheyu Zhang and Kalpana Singh and Yoed Tsur and Jigang Zhou and James J. Dynes and Venkataraman Thangadurai",
• title = "Studies on effect of {Ca}-doping on structure and electrochemical properties of garnet-type {Y3-xCaxFe5O12-o}",
• journal = "Journal of Solid State Chemistry",
• year = "2020",
• volume = "290",
• pages = "121530",
• month = oct,
• keywords = "genetic algorithms, genetic programming, Calcium, Yttrium iron garnet, Oxygen non-stoichiometry, Oxygen reduction reaction, Impedance spectroscopy genetic programming",
• ISSN = "0022-4596",
• URL = "http://www.sciencedirect.com/science/article/pii/S0022459620303601",
• DOI = "doi:10.1016/j.jssc.2020.121530",
• size = "11 pages",
• abstract = "In this study, effect of Ca-doping on electrical and electrochemical properties of garnet structure Y3-xCaxFe5O12-delta (x ​= ​0, 0.05, 0.1, 0.3, 0.5 and 0.7) was investigated. Cubic-phase (Ia-3d) garnet was prepared through sol-gel method and sintered at 1100 ​degreeC for 2 ​h in air. Highest oxygen non-stoichiometry (delta = ​0.19) was found in x ​= ​0.3 member. X-ray absorption spectroscopy (XAS) confirmed the formation of hole carriers () due to Ca-substitution for Y in Y3Fe5O12. 4-Probe DC measurements showed that electrical conductivity increased with an increase in Calcium amount until x ​= ​0.1 (1.58 ​S/cm at 750 ​degreeC) and then decreased due to decrease in the concentration of the charge carriers. Lowest area specific resistance (ASR) of 1 ohms cm2 was seen at 750 ​degreeC in air for the symmetrical cell with x ​= ​0.3 garnet-LSGM composite electrode. Studies on pO2 dependent ASR and impedance spectroscopy genetic programming (ISGP) analysis revealed that oxygen dissociation and partial reduction of adsorbed oxygen molecule co-limit the electrochemical performance for oxygen reduction reaction (ORR).",

}

Genetic Programming entries for Zheyu Zhang Kalpana Singh Yoed Tsur Jigang Zhou James J Dynes Venkataraman Thangadurai

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