abstract = "An approach combining genetic programming (GP), neural
network and electrical knowledge equations is presented
for electronic device modeling. The proposed model
includes a GP-generated symbolic function accurately
representing device behavior within the training range,
and a knowledge equation providing reliable tendencies
of electronic behavior outside the training range. A
correctional neural network is trained to align the
knowledge equations with the GP-generated symbolic
functions at the boundary of training data. The
proposed method is more robust than the GP-generated
symbolic functions alone because of improved
extrapolation ability, and more accurate than the
knowledge equations alone because of the genetic
program's ability to learn non-ideal relationships
inherent in the practical data. The method is
demonstrated by applying it to a practical
high-frequency, high-power transistor called a HEMT
(High-Electron Mobility Transistor) used in wireless
transmitters.",